Paper Title:
Radial Expansion Growth of SiC Single Crystals with Higher Crystal Quality
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
79-82
DOI
10.4028/www.scientific.net/MSF.457-460.79
Citation
T. Fujimoto, H. Tsuge, M. Katsuno, N. Ohtani, H. Yashiro, M. Nakabayashi, "Radial Expansion Growth of SiC Single Crystals with Higher Crystal Quality", Materials Science Forum, Vols. 457-460, pp. 79-82, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Xiang Long Yang, Kun Yang, Xiu Fang Chen, Yan Peng, Xiao Bo Hu, Xian Gang Xu
Chapter I: SiC Material
Abstract:Bulk 4H-SiC crystals were grown on 4° off-axis seeds by the physical vapor transport technique. Two completely different surface morphologies...
68
Authors: Jun Kojima, Yuichiro Tokuda, Emi Makino, Naohiro Sugiyama, Norihiro Hoshino, Isaho Kamata, Hidekazu Tsuchida
1.1 Bulk Growth
Abstract:In order to diffuse the use of SiC, mass-production technologies of SiC wafers are needed. It is easy to be understood that high-speed and...
23