Paper Title:
Surface Preparation of 6H-Silicon Carbide Substrates for Growth of High-Quality SiC Epilayers
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
797-800
DOI
10.4028/www.scientific.net/MSF.457-460.797
Citation
K. S. Lee, S. H. Lee, M. Kim, K. S. Nahm, "Surface Preparation of 6H-Silicon Carbide Substrates for Growth of High-Quality SiC Epilayers ", Materials Science Forum, Vols. 457-460, pp. 797-800, 2004
Online since
June 2004
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