Paper Title:
Improved AlNi Ohmic Contacts to p-Type SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
841-844
DOI
10.4028/www.scientific.net/MSF.457-460.841
Citation
B. H. Tsao, S. Liu, J. D. Scofield, "Improved AlNi Ohmic Contacts to p-Type SiC", Materials Science Forum, Vols. 457-460, pp. 841-844, 2004
Online since
June 2004
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