Paper Title:
Electrical Characterization of Deposited and Oxidized Ta2Si as Dielectric Film for SiC Metal-Insulator-Semiconductor Structures
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
845-848
DOI
10.4028/www.scientific.net/MSF.457-460.845
Citation
A. Pérez-Tomás, D. Tournier, J. Montserrat, N. Mestres, F. Sandiumenge, J. Millan, "Electrical Characterization of Deposited and Oxidized Ta2Si as Dielectric Film for SiC Metal-Insulator-Semiconductor Structures ", Materials Science Forum, Vols. 457-460, pp. 845-848, 2004
Online since
June 2004
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