Paper Title:
The Formation of Low Resistance Ohmic Contacts to 4H-SiC, Circumventing the Need for Post Annealing, Studied by Specific Contact Resistance Measurements and X-Ray Photoelectron Spectroscopy
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
853-856
DOI
10.4028/www.scientific.net/MSF.457-460.853
Citation
O. J. Guy, G. Pope, I. Blackwood, K.S. Teng, W.Y. Lee, S.P. Wilks, P. A. Mawby, "The Formation of Low Resistance Ohmic Contacts to 4H-SiC, Circumventing the Need for Post Annealing, Studied by Specific Contact Resistance Measurements and X-Ray Photoelectron Spectroscopy", Materials Science Forum, Vols. 457-460, pp. 853-856, 2004
Online since
June 2004
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