Paper Title:
Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
881-884
DOI
10.4028/www.scientific.net/MSF.457-460.881
Citation
A. Scorzoni, F. Moscatelli, A. Poggi, G.C. Cardinali, R. Nipoti, "Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC ", Materials Science Forum, Vols. 457-460, pp. 881-884, 2004
Online since
June 2004
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