Paper Title:
Effect of High-Dose Aluminium Implantation on 4H-SiC Oxidation
| Periodical |
Materials Science Forum (Volumes 457 - 460)
|
| Main Theme |
Silicon Carbide and Related Materials 2003
|
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
885-888 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.885 |
| Citation |
Lin Cheng et al., 2004, Materials Science Forum, 457-460, 885 |
| Online since |
June, 2004 |
| Authors |
Lin Cheng, Janna R. B. Casady, Janice Mazzola, Jeff B. Casady, Yaroslav Koshka, V. Bondarenko |
| Keywords |
4H-SiC, FTIR, High Frequency C-V Characteristics, High-Fluence Implantation, Oxidation, Photoluminescence (PL), SIMS |
| Price |
US$ 28,- |