Paper Title:

Effect of High-Dose Aluminium Implantation on 4H-SiC Oxidation

Periodical Materials Science Forum (Volumes 457 - 460)
Main Theme Silicon Carbide and Related Materials 2003
Edited by Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages 885-888
DOI 10.4028/www.scientific.net/MSF.457-460.885
Citation Lin Cheng et al., 2004, Materials Science Forum, 457-460, 885
Online since June, 2004
Authors Lin Cheng, Janna R. B. Casady, Janice Mazzola, Jeff B. Casady, Yaroslav Koshka, V. Bondarenko
Keywords 4H-SiC, FTIR, High Frequency C-V Characteristics, High-Fluence Implantation, Oxidation, Photoluminescence (PL), SIMS
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