Paper Title:
Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
893-896
DOI
10.4028/www.scientific.net/MSF.457-460.893
Citation
S. Blanqué, R. Pérez, P. Godignon, N. Mestres, E. Morvan, A. Kerlain, C. Dua, C. Brylinski, M. Zielinski, J. Camassel, "Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals ", Materials Science Forum, Vols. 457-460, pp. 893-896, 2004
Online since
June 2004
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