Paper Title:
Effect of Implantation Temperature on Redistribution of Al in SiC during Annealing
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
897-900
DOI
10.4028/www.scientific.net/MSF.457-460.897
Citation
I.O. Usov, A.A. Suvorova, A.V. Suvorov, "Effect of Implantation Temperature on Redistribution of Al in SiC during Annealing", Materials Science Forum, Vols. 457-460, pp. 897-900, 2004
Online since
June 2004
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