Paper Title:

Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC

Periodical Materials Science Forum (Volumes 457 - 460)
Main Theme Silicon Carbide and Related Materials 2003
Edited by Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages 901-904
DOI 10.4028/www.scientific.net/MSF.457-460.901
Citation Junji Senzaki et al., 2004, Materials Science Forum, 457-460, 901
Online since June, 2004
Authors Junji Senzaki, Kenji Fukuda, Kazuo Arai
Keywords 4H-SiC, Carrier Concentration, Carrier Mobility, Hall-Effect Measurement, Ion Implantation, Post Implantation Annealing, Sheet Resistance
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