Paper Title:
Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
905-908
DOI
10.4028/www.scientific.net/MSF.457-460.905
Citation
K. Narita, Y. Hijikata, H. Yaguchi, S. Yoshida, J. Senzaki, S. Nakashima, "Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy ", Materials Science Forum, Vols. 457-460, pp. 905-908, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Tomasz Sledziewski, Gunter Ellrott, W. Rösch, Heiko B. Weber, Michael Krieger
Chapter II: Fundamental and Characterization of SiC
Abstract:We have investigated the electrical properties of germanium-implanted n-type 4H-SiC epitaxial layers. Deep level transient spectroscopy...
347
Authors: Hiroaki Hanafusa, Keisuke Maruyama, Shohei Hayashi, Seiichiro Higashi
Chapter III: Processing of SiC
Abstract:Image quality (IQ) values of an electron-back-scattering diffraction (EBSD) pattern were used to investigate layer recrystallization for the...
391