Paper Title:
Annealing Process of N+-/P+-Ions Coimplanted along with Si+-, C+- or Ne+-Ions into 4H-SiC – Governed by Formation of Electrically Neutral Complexes or by Site-Competition-Effect?
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
909-912
DOI
10.4028/www.scientific.net/MSF.457-460.909
Citation
F. Schmid, G. Pensl, "Annealing Process of N+-/P+-Ions Coimplanted along with Si+-, C+- or Ne+-Ions into 4H-SiC – Governed by Formation of Electrically Neutral Complexes or by Site-Competition-Effect? ", Materials Science Forum, Vols. 457-460, pp. 909-912, 2004
Online since
June 2004
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