Paper Title:
Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
91-94
DOI
10.4028/www.scientific.net/MSF.457-460.91
Citation
D. Chaussende, C. Balloud, L. Auvray, F. Baillet, M. Zielinski, S. Juillaguet, M. Mermoux, E. Pernot, J. Camassel, M. Pons, R. Madar, "Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method", Materials Science Forum, Vols. 457-460, pp. 91-94, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Didier Chaussende, Francis Baillet, Ludovic Charpentier, Etienne Pernot, Michel Pons, Roland Madar
25
Authors: Jung Kyu Kim, Kap Ryeol Ku, Dong Jin Kim, Sang Phil Kim, Won Jae Lee, Byoung Chul Shin, Geun Hyoung Lee, Il Soo Kim
Abstract:SiC crystal boules with different shapes were prepared using sublimation physical vapor transport technique (PVT) and then their crystal...
47
Authors: Sylvie Contreras, Marcin Zielinski, Leszek Konczewicz, Caroline Blanc, Sandrine Juillaguet, Ralf Müller, Ulrike Künecke, Peter J. Wellmann, Jean Camassel
Abstract:We report on investigation of p-type doped, SiC wafers grown by the Modified- Physical Vapor Transport (M-PVT) method. SIMS measurements...
633
Authors: Jung Doo Seo, Joon Ho An, Jung Gon Kim, Jung Kyu Kim, Myung Ok Kyun, Won Jae Lee, Il Soo Kim, Byoung Chul Shin, Kap Ryeol Ku
Abstract:SiC single crystal ingots were prepared onto different seed material using sublimation PVT techniques and then their crystal quality was...
9