Paper Title:
Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
913-916
DOI
10.4028/www.scientific.net/MSF.457-460.913
Citation
Y. Negoro, K. Katsumoto, H. Matsunami, T. Kimoto, G. Pensl, F. Schmid, "Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face", Materials Science Forum, Vols. 457-460, pp. 913-916, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: K. Narita, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Junji Senzaki, Shinichi Nakashima
905
Authors: Konstantin Vassilevski, J. Hedley, Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright
925
Authors: Ivan V. Ilyin, Marina V. Muzafarova, P.G. Baranov, B.Ya. Ber, A.N. Ionov, E.N. Mokhov, Pavel A. Ivanov, M.A. Kaliteevskii, P.S. Kop'ev
Abstract:High concentration of two types of P donors up to 1017 cm-3 in SiC enriched with 30Si after neutron transmutation doping (NTD) has been...
599
Authors: Ida E. Tyschenko, A.G. Cherkov, M. Voelskow, V.P. Popov
Abstract:The behavior of Sb and In atoms embedded into silicon-on-insulator structure (SOI) near the bonding interface was investigated as a function...
137
Authors: N. Chuchvaga, E. Bogdanova, A. Strelchuk, Evgenia V. Kalinina, D.B. Shustov, M. Zamoryanskaya, V. Shkuratov
Chapter 7: Electrical and Structural Characterization
Abstract:A comparative research of the cathodoluminescence and electrical characteristics of the samples 4H-SiC irradiated with high energy Xe ions...
625