Paper Title:
Investigation of Two-Stage Activation Annealing of Al-Implanted 4H-SiC Layers
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
921-924
DOI
10.4028/www.scientific.net/MSF.457-460.921
Citation
J. N. Merrett, J. D. Scofield, B. H. Tsao, M. S. Mazzola, D. Seale, W.A. Draper, I. Sankin, J. B. Casady, V. Bondarenko, "Investigation of Two-Stage Activation Annealing of Al-Implanted 4H-SiC Layers", Materials Science Forum, Vols. 457-460, pp. 921-924, 2004
Online since
June 2004
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Price
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