Paper Title:
Reactive Ion Etching of Silicon Carbide with Patterned Boron Implantation
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
925-928
DOI
10.4028/www.scientific.net/MSF.457-460.925
Citation
K. Vassilevski, J. Hedley, A. B. Horsfall, C. M. Johnson, N. G. Wright, "Reactive Ion Etching of Silicon Carbide with Patterned Boron Implantation", Materials Science Forum, Vols. 457-460, pp. 925-928, 2004
Online since
June 2004
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