Paper Title:
Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
933-936
DOI
10.4028/www.scientific.net/MSF.457-460.933
Citation
Y. Negoro, K. Katsumoto, T. Kimoto, H. Matsunami, "Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap", Materials Science Forum, Vols. 457-460, pp. 933-936, 2004
Online since
June 2004
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