Paper Title:
Contribution of X-Ray Diffraction Simulations to Experimental Study of High Energy He Implantation at High Dose in 4H-SiC at Room Temperature
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
937-940
DOI
10.4028/www.scientific.net/MSF.457-460.937
Citation
A. Declémy, A.A. Shiryaev, S. Stepanov, J. F. Barbot, M. F. Beaufort, E. Oliviero, E. Ntsoenzok, T. Sauvage, "Contribution of X-Ray Diffraction Simulations to Experimental Study of High Energy He Implantation at High Dose in 4H-SiC at Room Temperature", Materials Science Forum, Vols. 457-460, pp. 937-940, 2004
Online since
June 2004
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Price
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