Paper Title:

Contribution of X-Ray Diffraction Simulations to Experimental Study of High Energy He Implantation at High Dose in 4H-SiC at Room Temperature

Periodical Materials Science Forum (Volumes 457 - 460)
Main Theme Silicon Carbide and Related Materials 2003
Edited by Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages 937-940
DOI 10.4028/www.scientific.net/MSF.457-460.937
Citation Alain Declémy et al., 2004, Materials Science Forum, 457-460, 937
Online since June, 2004
Authors Alain Declémy, A.A. Shiryaev, S. Stepanov, Jean François Barbot, Marie France Beaufort, Erwan Oliviero, E. Ntsoenzok, Thierry Sauvage
Keywords Dynamical Diffraction Theory, Ion Implantation, Silicon Carbide (SiC), X-Ray Diffraction (XRD)
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