Paper Title:
Contribution of X-Ray Diffraction Simulations to Experimental Study of High Energy He Implantation at High Dose in 4H-SiC at Room Temperature
| Periodical |
Materials Science Forum (Volumes 457 - 460)
|
| Main Theme |
Silicon Carbide and Related Materials 2003
|
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
937-940 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.937 |
| Citation |
Alain Declémy et al., 2004, Materials Science Forum, 457-460, 937 |
| Online since |
June, 2004 |
| Authors |
Alain Declémy, A.A. Shiryaev, S. Stepanov, Jean François Barbot, Marie France Beaufort, Erwan Oliviero, E. Ntsoenzok, Thierry Sauvage |
| Keywords |
Dynamical Diffraction Theory, Ion Implantation, Silicon Carbide (SiC), X-Ray Diffraction (XRD) |
| Price |
US$ 28,- |