Paper Title:
SiC Donor Doping by 300°C P Implantation: Characterization of the Doped Layer Properties in Dependence of the Post-Implantation Annealing Temperature
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
945-950
DOI
10.4028/www.scientific.net/MSF.457-460.945
Citation
A. Poggi, R. Nipoti, F. Moscatelli, G.C. Cardinali, M. Canino, "SiC Donor Doping by 300°C P Implantation: Characterization of the Doped Layer Properties in Dependence of the Post-Implantation Annealing Temperature", Materials Science Forum, Vols. 457-460, pp. 945-950, 2004
Online since
June 2004
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