Paper Title:
Modeling of the Influence of Schottky Barrier Inhomogeneities on SiC Diode Characteristics
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
973-976
DOI
10.4028/www.scientific.net/MSF.457-460.973
Citation
R. Weiss, L. Frey, H. Ryssel, "Modeling of the Influence of Schottky Barrier Inhomogeneities on SiC Diode Characteristics", Materials Science Forum, Vols. 457-460, pp. 973-976, 2004
Online since
June 2004
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Price
$32.00
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