Paper Title:
Challenges and First Results of SiC Schottky Diode Manufacturing using a 3-Inch Technology
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
981-984
DOI
10.4028/www.scientific.net/MSF.457-460.981
Citation
M. Treu, R. Rupp, H. Brunner, F. Dahlquist, C. Hecht, "Challenges and First Results of SiC Schottky Diode Manufacturing using a 3-Inch Technology", Materials Science Forum, Vols. 457-460, pp. 981-984, 2004
Online since
June 2004
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