Paper Title:

Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation

Periodical Materials Science Forum (Volumes 457 - 460)
Main Theme Silicon Carbide and Related Materials 2003
Edited by Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages 989-992
DOI 10.4028/www.scientific.net/MSF.457-460.989
Citation Konstantin Vassilevski et al., 2004, Materials Science Forum, 457-460, 989
Online since June, 2004
Authors Konstantin Vassilevski, Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright
Keywords Boron, Edge Termination, Guard Rings, Ion Implantation, Schottky Diode
Price US$ 28,-
Article Preview
View full size