Paper Title:
Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
989-992
DOI
10.4028/www.scientific.net/MSF.457-460.989
Citation
K. Vassilevski, A. B. Horsfall, C. M. Johnson, N. G. Wright, "Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation", Materials Science Forum, Vols. 457-460, pp. 989-992, 2004
Online since
June 2004
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