Paper Title:
Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation
| Periodical |
Materials Science Forum (Volumes 457 - 460)
|
| Main Theme |
Silicon Carbide and Related Materials 2003
|
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
989-992 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.989 |
| Citation |
Konstantin Vassilevski et al., 2004, Materials Science Forum, 457-460, 989 |
| Online since |
June, 2004 |
| Authors |
Konstantin Vassilevski, Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright |
| Keywords |
Boron, Edge Termination, Guard Rings, Ion Implantation, Schottky Diode |
| Price |
US$ 28,- |