Large Diameter and Long Length Growth of SiC Single Crystal |
| Journal |
Materials Science Forum (Volumes 457 - 460) |
| Volume |
Silicon Carbide and Related Materials 2003 |
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
99-102 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.99 |
| Citation |
Tomohisa Kato et al., 2004, Materials Science Forum, 457-460, 99 |
| Online since |
June, 2004 |
| Authors |
Tomohisa Kato, Takaya Ohno, Fusao Hirose, Naoki Oyanagi, Shinichi Nishizawa, Kazuo Arai |
| Keywords |
Defect, Dislocation, Silicon Carbide (SiC), Single Crystal, Sublimation Growth, X-Ray Topography |
| Full Paper |
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