Paper Title:
Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
997-1000
DOI
10.4028/www.scientific.net/MSF.457-460.997
Citation
H. Saitoh, T. Kimoto, H. Matsunami, "Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature", Materials Science Forum, Vols. 457-460, pp. 997-1000, 2004
Online since
June 2004
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Price
$35.00
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