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Silicon Carbide and Related Materials 2003

Materials Science Forum Volumes 457 - 460

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• p131 Continuous Growth of SiC Single Crystal by the Spray Dried Powder Made of Ultra-Fine Particle Precursors   [ 1 M ]
  Authors: Yoshimitsu Yamada, Shinichi Nishizawa, Shinichi Nakashima, Kazuo Arai
• p135 Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method   [ 235 K ]
  Authors: Laurent Auvray, Didier Chaussende, Francis Baillet, Ludovic Charpentier, Michel Pons, Roland Madar
• p139 In Situ SiC Feeding by Chemical Vapor Deposition for Bulk Growth   [ 801 K ]
  Authors: Ludovic Charpentier, Francis Baillet, Didier Chaussende, Laurent Auvray, Michel Pons, Etienne Pernot, Roland Madar
• p143 Stable Parameter Range for 3C-SiC Sublimation Growth on Graphite   [ 1 M ]
  Authors: Jürgen Wollweber, Alkyoni Mantzari, Efstathios K. Polychroniadis, Carole Balloud, A. Freudenberg, R. Nitschke, Jean Camassel
• p147 Microstructure of Cubic SiC Grown by the Modified Lely-Method   [ 2 M ]
  Authors: M. Nerding, Kurt Semmelroth, Gerhard Pensl, Hiroyuki Nagasawa, Horst P. Strunk
• p151 Growth of 3C-SiC Bulk Material by the Modified Lely Method   [ 1 M ]
  Authors: Kurt Semmelroth, Michael Krieger, Gerhard Pensl, Hiroyuki Nagasawa, Roland Püsche, Martin Hundhausen, Lothar Ley, M. Nerding, Horst P. Strunk
• p157 Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques   [ 2 M ]
  Authors: X. Huang, Michael Dudley, W. Cho, Robert S. Okojie, Philip G. Neudeck
• p163 Surface Mechanisms in Homoepitaxial Growth on α-SiC{0001}-Vicinal Faces   [ 3 M ]
  Authors: Shun-ichi Nakamura, Tsunenobu Kimoto, Hiroyuki Matsunami
• p169 Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers   [ 815 K ]
  Authors: Philip G. Neudeck, J. Anthony Powell, Andrew J. Trunek, David J. Spry
• p175 Flash Lamp Supported Deposition of 3C-SiC (FLASiC) – a Promising Technique to Produce High Quality Cubic SiC Layers   [ 899 K ]
  Authors: Wolfgang Skorupa, D. Panknin, W. Anwand, M. Voelskow, Gabriel Ferro, Yves Monteil, André Leycuras, Jörg Pezoldt, R.A. McMahon, M. Smith, Jean Camassel, J. Stoemenos, Efstathios K. Polychroniadis, Phillippe Godignon, Narcis Mestres, Daniel Turover, S. Rushworth, A. Friedberger
• p181 Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications   [ 256 K ]
  Authors: Bernd Thomas, Wolfgang Bartsch, René A. Stein, Reinhold Schörner, Dietrich Stephani
• p185 Selective Growth of 4H-SiC on 4H-SiC Substrates using a High Temperature Mask   [ 1 M ]
  Authors: Can Hua Li, Joseph Seiler, I. Bhat, T. Paul Chow
• p189 Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition   [ 438 K ]
  Authors: Yi Chen, Tsunenobu Kimoto, Yuuichi Takeuchi, Rajesh Kumar Malhan, Hiroyuki Matsunami
• p193 Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD   [ 173 K ]
  Authors: Christer Hallin, Qamar-ul Wahab, Ivan G. Ivanov, Peder Bergman, Erik Janzén
• p197 High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(000-1) Face   [ 236 K ]
  Authors: Katsunori Danno, Tsunenobu Kimoto, Hiroyuki Matsunami