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Silicon Carbide and Related Materials 2003

Materials Science Forum Volumes 457 - 460

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• p1507 Substrate Bias Amplification of a SiC Junction Field Effect Transistor with a Catalytic Gate Electrode   [ 393 K ]
  Authors: Shinji Nakagomi, M. Takahashi, Y. Kokubun, Lars Unéus, Susan Savage, H. Wingbrant, Mike Andersson, Ingemar Lundström, M. Löfdahl, Anita Lloyd Spetz
• p1511 Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates   [ 2 M ]
  Authors: Rachael L. Myers-Ward, Stephen E. Saddow, Shailaja P. Rao, Karl D. Hobart, M. Fatemi, Francis J. Kub
• p1515 Formation of 3C-SiC Films Embedded in SiO₂ by Sacrificial Oxidation   [ 1014 K ]
  Authors: D. Panknin, Phillippe Godignon, Narcis Mestres, Efstathios K. Polychroniadis, J. Stoemenos, Gabriel Ferro, Jörg Pezoldt, Wolfgang Skorupa
• p1519 Young's Modulus and Residual Stress of Polycrystalline 3C-SiC Films Grown by LPCVD and Measured by the Load-Deflection Technique   [ 193 K ]
  Authors: Xiao An Fu, J. Dunning, Christian A. Zorman, Mehran Mehregany
• p1523 Characterization of Polycrystalline SiC Thin Films for MEMS Applications using Surface Micromachined Devices   [ 221 K ]
  Authors: J. Dunning, Xiao An Fu, Srihari Rajgopal, Mehran Mehregany, Christian A. Zorman
• p1527 Reaction Bonding of Microstructured Silicon Carbide using Polymer and Silicon Thin Film   [ 115 K ]
  Authors: K. Rajanna, S. Tanaka, Toshio Itoh, Masayoshi Esashi
• p1531 Fabrication of Suspended Nanomechanical Structures from Bulk 6H-SiC Substrates   [ 2 M ]
  Authors: X.M.H. Huang, X.L. Feng, M.K. Prakash, S. Kumar, Christian A. Zorman, Mehran Mehregany, M.L. Roukes
• p1537 Sublimation Growth of Bulk AlN Crystals: Process Temperature and Growth Rate   [ 899 K ]
  Authors: Boris M. Epelbaum, Matthias Bickermann, Albrecht Winnacker
• p1541 Structural, Optical and Electrical Properties of Bulk AlN Crystals Grown by PVT   [ 993 K ]
  Authors: Matthias Bickermann, Boris M. Epelbaum, Albrecht Winnacker
• p1545 Experimental and Theoretical Analysis of Sublimation Growth of Bulk AlN Crystals   [ 687 K ]
  Authors: E.N. Mokhov, S.N. Smirnov, A.S. Segal, D. Bazarevskiy, Yuri N. Makarov, M.G. Ramm, H. Helava
• p1549 X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH₃   [ 101 K ]
  Authors: L. YingShen, S. Hashimoto, Koji Abe, R. Hayashibe, Takanobu Yamagami, Masato Nakao, Kiichi Kamimura
• p1553 Plasma-Assisted Molecular Beam Epitaxial Growth of AlN Films on Vicinal Sapphire (0001) Substrates   [ 849 K ]
  Authors: Xu-Qiang Shen, Hajime Okumura
• p1557 Growth of GaN/AlN Quantum Dots on SiC (000-1) by Plasma-Assisted MBE   [ 64 K ]
  Authors: N. Gogneau, F. Fossard, Eva Monroy, Sylvain Monnoye, Hugues Mank, B. Daudin
• p1561 Control of the 2D/3D Transition of Cubic GaN/AlN Nanostructures on 3C-SiC Epilayers   [ 153 K ]
  Authors: S. Founta, N. Gogneau, Eugénie Martinez, Gabriel Ferro, Yves Monteil, B. Daudin, H. Mariette
• p1565 In-Situ Monitoring of AlN Crystal Growth on 6H-SiC by the Use of a Pyrometer   [ 417 K ]
  Authors: Takaya Suzuki, T. Inushima