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Silicon Carbide and Related Materials 2003

Materials Science Forum Volumes 457 - 460

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• p1569 Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy   [ 242 K ]
  Authors: Norio Onojima, J. Kaido, Jun Suda, Tsunenobu Kimoto, Hiroyuki Matsunami
• p1573 Growth of N-Face Polarity III-Nitride Heterostructures on C-Face 4H-SiC by Plasma-Assisted MBE   [ 1 M ]
  Authors: Eva Monroy, E. Sarigiannidou, F. Fossard, E. Enjalbert, N. Gogneau, E. Bellet-Amalric, J. Brault, J.-L. Rouvière, Le Si Dang, Sylvain Monnoye, Hugues Mank, B. Daudin
• p1577 Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates   [ 262 K ]
  Authors: F. Fossard, J. Brault, N. Gogneau, Eva Monroy, F. Enjalbert, Le Si Dang, E. Bellet-Amalric, Sylvain Monnoye, B. Daudin, Hugues Mank
• p1581 GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy   [ 1 M ]
  Authors: J. Napierala, D.M. Martin, H.-J. Bühlmann, S. Gradecak, M. Ilegems
• p1585 Growth and Field Emission of GaN Nanowires   [ 577 K ]
  Authors: T.Y. Kim, Seung Hyun Lee, Y.H. Mo, Kee Suk Nahm
• p1589 Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC Substrates   [ 107 K ]
  Authors: A. Helman, M. Tchernycheva, K. Moumanis, A. Lusson, E. Warde, F.H. Julien, Eva Monroy, F. Fossard, B. Daudin, Le Si Dang
• p1593 Photoluminescence of GaN/AlN Quantum Dots Grown on SiC Substrates   [ 64 K ]
  Authors: F. Fossard, N. Gogneau, Eva Monroy, Le Si Dang, Sylvain Monnoye, Hugues Mank, B. Daudin
• p1597 Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition   [ 621 K ]
  Authors: Jae Kyeong Jeong, Ho Keun Song, Myung Yoon Um, Hyun Jin Kim, Hui-Chan Seo, Hee Jin Kim, Euijoon Yoon, Cheol Seong Hwang, Hyeong Joon Kim
• p1601 X-Ray Diffraction Imaging of GaN-Based Heterostructures on SiC   [ 1018 K ]
  Authors: B. Poust, P. Feichtinger, R. Sandhu, I.P. Smorchkova, B. Heying, T. Block, M. Wojtowicz, M.S. Goorsky
• p1605 Effects of Crystallinity on Hydrogen Exfoliation of GaN Layers   [ 487 K ]
  Authors: S. Hayashi, B. Poust, B. Heying, M.S. Goorsky
• p1609 Radiotracer Spectroscopy on Group II Acceptors in GaN   [ 311 K ]
  Authors: F. Albrecht, G. Pasold, Joachim Grillenberger, U. Reislöhner, Marc Dietrich, W. Witthuhn, Isolde Collaboration
• p1613 Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking Faults   [ 501 K ]
  Authors: B.J. Skromme, L. Chen, M.K. Mikhov, Hisanori Yamane, M. Aoki, F.J. DiSalvo
• p1617 An Ab Initio Study of Intrinsic Stacking Faults in GaN   [ 131 K ]
  Authors: Hisaomi Iwata, Sven Öberg, Patrick R. Briddon
• p1621 AlGaN / GaN HEMT Structures Grown on SiCOI Wafers Obtained by the Smart Cut^TM Technology   [ 410 K ]
  Authors: H. Larhèche, B. Faure, Claire Richtarch, Fabrice Letertre, R. Langer, P. Bove
• p1625 Thermal Characterisation of AlGaN/GaN HEMTs using Micro-Raman Scattering Spectroscopy and Pulsed I-V Measurements   [ 152 K ]
  Authors: R. Aubry, J.-C. Jacquet, Christian Dua, H. Gérard, B. Dessertenne, M.A. di Forte-Poisson, Yvon Cordier, S.L. Delage