Silicon Carbide and Related Materials 2003
Materials Science Forum Volumes 457 - 460
doi:10.4028/www.scientific.net/MSF.457-460
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p1629
High CW Power 0.3 μm Gate AlGaN/GaN HEMTs Grown by MBE on Sapphire
[
1 M
]
Authors: V. Desmaris, Joakim Eriksson, Niklas Rorsman, Herbert Zirath -
p1633
Self-Aligned N+ Polysilicon-Gate GaN MOSFETs
[
177 K
]
Authors: Kevin Matocha, T. Paul Chow, Ronald J. Gutmann
