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Silicon Carbide and Related Materials 2003

Materials Science Forum Volumes 457 - 460

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• p201 Growth of Device Quality 4H-SiC High Velocity Epitaxy   [ 232 K ]
  Authors: Rositza Yakimova, Mikael Syväjärvi, R.R Ciechonski, Qamar-ul Wahab
• p205 Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition   [ 292 K ]
  Authors: H. Fujiwara, Katsunori Danno, Tsunenobu Kimoto, T. Tojo, Hiroyuki Matsunami
• p209 4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition   [ 487 K ]
  Authors: Kazutoshi Kojima, Tetsuo Takahashi, Yuuki Ishida, Satoshi Kuroda, Hajime Okumura, Kazuo Arai
• p213 Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth   [ 246 K ]
  Authors: Yuuki Ishida, Tetsuo Takahashi, Kazutoshi Kojima, Hajime Okumura, Kazuo Arai, Sadafumi Yoshida
• p217 Comparative Studies of <0001> 4H-SiC Layers Grown with Either Silane or HexaMethylDisilane / Propane Precursor Systems   [ 532 K ]
  Authors: C. Sartel, Carole Balloud, Veronique Soulière, Sandrine Juillaguet, Jacques Dazord, Yves Monteil, Jean Camassel, S. Rushworth
• p221 Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization   [ 68 K ]
  Authors: S.M. Bishop, Edward A. Preble, Christer Hallin, Anne Henry, L. Storasta, Henrik Jacobsson, B.P. Wagner, Z.J. Reitmeier, Erik Janzén, Robert F. Davis
• p225 Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation   [ 102 K ]
  Authors: Shinsuke Harada, Koji Nakayama, Makato Sasaki, Hiromu Shiomi
• p229 Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions   [ 2 M ]
  Authors: Hidekazu Tsuchida, Isaho Kamata, Syunsuke Izumi, Takeshi Tawara, Kunikaza Izumi
• p233 Homoepitaxial Growth of Al-Doped 4H-SiC Using Bis-Trimethylsilylmethane Precursor   [ 279 K ]
  Authors: Ho Keun Song, Myung Yoon Um, Hoon Joo Na, Dae Hwan Kim, In Bok Song, Sang Yong Jung, Jae Kyeong Jeong, Jae Bin Lee, Hyeong Joon Kim
• p237 Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates   [ 285 K ]
  Authors: Caroline Blanc, C. Sartel, Veronique Soulière, Sandrine Juillaguet, Yves Monteil, Jean Camassel
• p241 Vapour-Liquid-Solid Induced Localised Growth of Heavily Al Doped 4H-SiC on Patterned Substrate   [ 794 K ]
  Authors: Christophe Jacquier, Gabriel Ferro, Phillippe Godignon, Josep Montserrat, Olivier Dezellus, Yves Monteil
• p245 Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism   [ 1 M ]
  Authors: F. Abdoun, Christophe Jacquier, Gabriel Ferro, François Cauwet, Yves Monteil
• p249 Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum   [ 75 K ]
  Authors: Sergey Y. Davydov, N.S. Savkina, Alexander A. Lebedev, Mikael Syväjärvi, Rositza Yakimova
• p253 Modelling of SiC-Matrix Composite Formation by Thermal Gradient Chemical Vapour Infiltration   [ 85 K ]
  Authors: V.I. Kulik, A.V. Kulik, M.S. Ramm, Yuri N. Makarov
• p257 Pendeo Epitaxial Growth of 3C-SiC on Si Substrates   [ 2 M ]
  Authors: A. Shoji, Yoichi Okui, Taro Nishiguchi, Satoru Ohshima, Shigehiro Nishino