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Silicon Carbide and Related Materials 2003

Materials Science Forum Volumes 457 - 460

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• p261 Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended Defects   [ 1 M ]
  Authors: Andrew J. Trunek, Philip G. Neudeck, J. Anthony Powell, David J. Spry
• p265 Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates   [ 825 K ]
  Authors: Thierry Chassagne, Gabriel Ferro, H. Haas, André Leycuras, Hugues Mank, Yves Monteil
• p269 Growth of SiC Films using Tetraethylsilane   [ 217 K ]
  Authors: N. Kubo, Tadahiro Kawase, S. Asahina, Nobuyuki Kanayama, H. Tsuda, A. Moritani, Koichi Kitahara
• p273 Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"   [ 362 K ]
  Authors: Thierry Chassagne, André Leycuras, Carole Balloud, P. Arcade, Hervé Peyre, Sandrine Juillaguet
• p277 Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy   [ 11 M ]
  Authors: Etienne Bustarret, Daniel Araújo, David Méndez, Francisco M. Morales, F.J. Pacheco, S.I. Molina, Névine Rochat, Gabriel Ferro, Yves Monteil
• p281 Potential of HMDS/C₃H₈ Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100)   [ 1 M ]
  Authors: Gabriel Ferro, S. Rushworth, Jean Camassel, Sandrine Juillaguet, Carole Balloud, Efstathios K. Polychroniadis, Y. Stoimenos, P. Seigle-Ferrand, Jacques Dazord, Yves Monteil, L.M. Smith
• p285 Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition   [ 1 M ]
  Authors: Taro Nishiguchi, Yoshihiko Mukai, Mitsutaka Nakamura, Koji Nishio, Toshiyuki Isshiki, Satoru Ohshima, Shigehiro Nishino
• p289 Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy   [ 124 K ]
  Authors: H. Takagi, Taro Nishiguchi, S. Ohta, Tomoaki Furusho, Satoru Ohshima, Shigehiro Nishino
• p293 Structure and Composition of 3C-SiC:Ge Alloys Grown on Si (111) Substrates by SSMBE   [ 246 K ]
  Authors: Petia Weih, Volker Cimalla, Thomas Stauden, Ratislav Kosiba, Lothar Spieß, Henry Romanus, M. Gubisch, W. Bock, Th. Freitag, P. Fricke, Oliver Ambacher, Jörg Pezoldt
• p297 Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)   [ 455 K ]
  Authors: Francisco M. Morales, Charbel Zgheib, S.I. Molina, Daniel Araújo, R. García, C. Fernández, A. Sanz-Hervás, Pierre M. Masri, Petia Weih, Thomas Stauden, Oliver Ambacher, Jörg Pezoldt
• p301 Stress Control in 3C-SiC Films Grown on Si(111)   [ 70 K ]
  Authors: Charbel Zgheib, Pierre M. Masri, Petia Weih, Oliver Ambacher, Jörg Pezoldt
• p305 Development of a High-Throughput LPCVD Process for Depositing Low Stress Poly-SiC   [ 393 K ]
  Authors: Xiao An Fu, J. Dunning, Christian A. Zorman, Mehran Mehregany
• p309 Low Temperature ECR-PECVD Microcrystalline SiC Growth by Pulsed Gas Flows   [ 184 K ]
  Authors: M.J. Hernández, M. Cervera, J. Piqueras, T. del Caño, J. Jiménez
• p313 Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers   [ 1 M ]
  Authors: Gabriel Ferro, D. Panknin, J. Stoemenos, Carole Balloud, Jean Camassel, Efstathios K. Polychroniadis, Yves Monteil, Wolfgang Skorupa
• p317 Low Temperature (320°C) Deposition of Hydrogenated Microcrystalline Cubic Silicon Carbide Thin Films   [ 184 K ]
  Authors: S. Miyajima, A. Yamada, Makoto Konagai