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Silicon Carbide and Related Materials 2003

Materials Science Forum Volumes 457 - 460

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• p509 Investigations of Defects Introduced in 4H-SiC n-Type Epitaxial Layers by Hydrogen DC Plasma   [ 212 K ]
  Authors: Laurent Ottaviani, Eugene B. Yakimov, P. Hidalgo, Santo Martinuzzi
• p513 Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy   [ 88 K ]
  Authors: Sergey A. Reshanov, Konrad Schneider, Reinhard Helbig, Gerhard Pensl, Hiroyuki Nagasawa, Adolf Schöner
• p517 Annealing Study on Radiation-Induced Defects in 6H-SiC   [ 211 K ]
  Authors: M.V.B. Pinheiro, Th. Lingner, F. Caudepon, Siegmund Greulich-Weber, Johann Martin Spaeth
• p521 Crystallographic Defects under Surface Morphological Defects of 4H-SiC Homoepitaxial Films   [ 250 K ]
  Authors: Tatsuya Okada, Tsunenobu Kimoto, K. Yamai, Hiroyuki Matsunami, F. Inoko
• p525 Formation of Stacking Faults in Diffused SiC p⁺/n^-/n⁺ and p⁺/p^-/n⁺ Diodes   [ 330 K ]
  Authors: Stanislav I. Soloviev, Dimitri I. Cherednichenko, Tangali S. Sudarshan
• p529 Residual Stresses and Stacking Faults in n-Type 4H-SiC Epilayers   [ 600 K ]
  Authors: Robert S. Okojie, M. Zhang, P. Pirouz
• p533 Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes   [ 269 K ]
  Authors: Robert E. Stahlbush, Mark E. Twigg, Kenneth G. Irvine, Joseph J. Sumakeris, T. Paul Chow, Peter A. Losee, Lin Zhu, Yi Tang, W. Wang
• p537 Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes   [ 299 K ]
  Authors: Mark E. Twigg, Robert E. Stahlbush, M. Fatemi, Stephen Arthur, Jeffery B. Fedison, Jesse B. Tucker, Shao Ping Wang
• p543 SiC Studied Via LEEN and Cathodoluminescence Spectroscopy   [ 228 K ]
  Authors: Leonard J. Brillson, Sergey P. Tumakha, Robert S. Okojie, M. Zhang, P. Pirouz
• p549 Properties of the Bound Excitons Associated to the 3838Å Line in 4H-SiC and the 4182Å Line in 6H-SiC   [ 356 K ]
  Authors: Anne Henry, Martin S. Janson, Erik Janzén
• p555 Electrical Transport Properties of n-Type 4H and 6H Silicon Carbide   [ 1 M ]
  Authors: Sylvie Contreras, Julien Pernot
• p561 Further Investigation of Silicon Vacancy-Related Luminescence in 4H and 6H SiC   [ 288 K ]
  Authors: John W. Steeds, S.A. Furkert, J.M. Hayes, W. Sullivan
• p565 Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers   [ 113 K ]
  Authors: Takeshi Tawara, Hidekazu Tsuchida, Syunsuke Izumi, Isaho Kamata, Kunikaza Izumi
• p569 Photoluminescence Mapping of a SiC Wafer in Device Processing   [ 896 K ]
  Authors: Michio Tajima, T. Sugahara, Norihiro Hoshino, Satoshi Tanimoto, Tetsuo Takahashi, Shinichi Nakashima, T. Yamamoto
• p573 Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum Wells   [ 505 K ]
  Authors: Song Bai, Robert P. Devaty, Wolfgang J. Choyke, Ute Kaiser, Günter Wagner, Mike F. MacMillan