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Recrystallization Mechanisms in Wire-Drawn Copper

Journal Materials Science Forum (Volumes 467 - 470)
Volume Recrystallization and Grain Growth
Edited by B. Bacroix, J.H. Driver, R. Le Gall, Cl. Maurice, R. Penelle, H. Réglé and L. Tabourot
Pages 135-140
DOI 10.4028/www.scientific.net/MSF.467-470.135
Citation Ph. Gerber et al., 2004, Materials Science Forum, 467-470, 135
Online since October, 2004
Authors Ph. Gerber, S. Jakani, Thierry Baudin, Marie Helene Mathon, Richard Penelle
Keywords Copper (Cu), Electron Backscatter Diffraction (EBSD), Nucleation, Recrystallization, Stored Energy
Abstract

Wire-drawn Electrolytic Tough Pitch copper deformed at moderate strain has been investigated with Electron Back Scattered Diffraction in a Scanning Electronic Microscope in order to evaluate the recrystallization mechanisms at the meso-scale. Experimentally, it has been shown that the static recrystallization takes place first in the highly deformed and misoriented areas, in the intermediate regions of the wire. The grains related to the <100> fiber nucleate and grow first in these regions, but some other orientations (including the <111> oriented grains) - that have a combined nucleation/growth potential - develop in second time. The annealing twinning is active from the beginning of the recrystallization and tends to randomize the final recrystallization texture.

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