Paper Title:
Secondary Recrystallization in Grain-Oriented Silicon Steel
  Abstract

Mechanism of Goss secondary recrystallization in grain-oriented silicon steel has been investigated by temperature gradient annealing and by in situ observation utilizing synchrotron x-ray topography. The results support the selective growth theory. Migration of Goss grains is controlled by second phase particles (inhibitor) and sharper Goss grains, which have higher frequency of CSL boundaries to the matrix, start to grow preferentially while the other matrix grains are stagnated by inhibitor. CSL boundaries are supposed to have lower grain boundary energy, thus suffer lower pinning force from the inhibitor and start to migrate at higher inhibition level. Based on this model, we have made a computer simulation and have found that this model successfully depicts the important features of secondary recrystallization; grain growth behavior of secondary grains, secondary grain size and sharpness of Goss texture.

  Info
Periodical
Materials Science Forum (Volumes 467-470)
Edited by
B. Bacroix, J.H. Driver, R. Le Gall, Cl. Maurice, R. Penelle, H. Réglé and L. Tabourot
Pages
853-862
DOI
10.4028/www.scientific.net/MSF.467-470.853
Citation
Y. Ushigami, T. Kumano, T. Haratani, S. Nakamura, S. Takebayashi, T. Kubota, "Secondary Recrystallization in Grain-Oriented Silicon Steel", Materials Science Forum, Vols. 467-470, pp. 853-862, 2004
Online since
October 2004
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Price
$32.00
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