Paper Title:

Application of Grazing-Incidence Small-Angle X-Ray Scattering Technique to Semiconducting Composite Materials

Periodical Materials Science Forum (Volumes 475 - 479)
Main Theme PRICM-5
Edited by Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Pages 1097-1100
DOI 10.4028/
Citation T. Ogawa et al., 2005, Materials Science Forum, 475-479, 1097
Online since January 2005
Authors T. Ogawa, H. Niwa, Hiroshi Okuda, Shojiro Ochiai
Keywords GI-SAXS, Quantum Dot (QD), Silicon-Germanium (SiGe)
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Grazing-incidence small-angle scattering (GI-SAXS) technique was applied to self-assembled Ge islands capped with Si. GI-SAXS has a merit over TEM and AFM that the structure of islands buried in a cap layer for stabilization can be evaluated nondestructively. By analyzing the scattering patterns, the size of Ge islands was estimated to be about 5 nm in height and 26 nm in diameter, with the islands density of 4.2×1014/m2. From the best fitting of two-dimensional model intensity to the experiments, the shape of the islands was deduced