Paper Title:
Joining of SiC Ceramic with Ternary Carbide Ti3SiC2
  Abstract

The investigation on joining of SiC to SiC has been conducted for some years. It is essential that the mechanical and thermal properties of the joints should meet the requirements of engineering. In view of the fact that the ternary carbide Ti3SiC2 has shown unique mechanical and thermal properties, it is promising to join SiC to SiC using ternary carbide Ti3SiC2 as filler (welding compound), and this is the subject to deal with in this paper. The joining of SiC to SiC has been successfully realized by hot pressing reaction joining process using Ti3SiC2 powder as filler. The optimized technological parameters have been obtained by orthogonal experiments, under which the achieved weld strength is higher than that of the welding base material SiC ceramic. Ti3SiC2 is stable up to 1200oC in Ar atmosphere with an external pressure. At the joining temperatures of 1300~ 1600oC the main phases of the interface are Ti3SiC2, TiC and TiSi2. The mechanism of bonding at the interface is interdiffusion and chemical reaction.

  Info
Periodical
Materials Science Forum (Volumes 475-479)
Main Theme
Edited by
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Pages
1255-1258
DOI
10.4028/www.scientific.net/MSF.475-479.1255
Citation
H. Dong, W. B. Han, S. J. Li, "Joining of SiC Ceramic with Ternary Carbide Ti3SiC2", Materials Science Forum, Vols. 475-479, pp. 1255-1258, 2005
Online since
January 2005
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Price
$32.00
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