Paper Title:
Low Threshold Current Density 1.5 μm Strained-MQW Laser by n-Type Modulation-Doping
  Abstract

1.5µm n-type modulation-doping InGaAsP/InGaAsP strained multiple quantum wells grown by low pressure metalorganic chemistry vapor decomposition technology is reported for the first time in the world. N-type modulation-doped lasers exhibit much lower threshold current densities than conventional lasers with undoped barrier layers. The lowest threshold current density we obtained was 1052.5 A/cm2 for 1000 µm long lasers with seven quantum wells. The estimated threshold current density for an infinite cavity length was 94.72A/cm2/well, reduced by 23.3% compared with undoped barrier lasers. The n-type modulation doping effects on the lasing characteristics in 1.5µm devices have been demonstrated.

  Info
Periodical
Materials Science Forum (Volumes 475-479)
Main Theme
Edited by
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Pages
1663-1668
DOI
10.4028/www.scientific.net/MSF.475-479.1663
Citation
R. Zhang, W. Wang, F. Zhou, J. Bian, L. Zhao, H. L. Zhu, S. S. Jian, "Low Threshold Current Density 1.5 μm Strained-MQW Laser by n-Type Modulation-Doping", Materials Science Forum, Vols. 475-479, pp. 1663-1668, 2005
Online since
January 2005
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