Paper Title:
Growth of an Inx(OOH,S)y Buffer Layer and Its Application to Cu(In,Ga)(Se,S)2 Solar Cells
  Abstract

As an alternative to a CdS buffer layer for Cu(In,Ga)Se2-based solar cells, we prepared In-based buffer layers using a chemical bath deposition method. XPS and XRD analyses revealed that the In-based buffer layers contained In2S3 and InOOH phases. Compared with CdS film, the In-based film, Inx(OOH,S)y, had higher optical transmittance and a shorter absorption edge. The Cu(In,Ga)(Se,S)2 solar cell with the Inx(OOH,S)y buffer layer had better photovoltaic properties than that with a conventional CdS buffer layer. The conversion efficiency of the best Cu(In,Ga)(Se,S)2 solar cell with Inx(OOH,S)y buffer layer was 12.55 % for an active area of 0.19 cm2.

  Info
Periodical
Materials Science Forum (Volumes 475-479)
Main Theme
Edited by
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Pages
1681-1684
DOI
10.4028/www.scientific.net/MSF.475-479.1681
Citation
K. H. Kim, L.L. Larina, K. H. Yoon, M. Konagai, B. T. Ahn, "Growth of an Inx(OOH,S)y Buffer Layer and Its Application to Cu(In,Ga)(Se,S)2 Solar Cells", Materials Science Forum, Vols. 475-479, pp. 1681-1684, 2005
Online since
January 2005
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Price
$32.00
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