Paper Title:
Comparison the Gain Characteristic of AlInGaAs/AlGaAs and GaAs/AlGaAs Quantum Wells
  Abstract

According to the Harrison’s model, the level change of conduction and valence bands caused by the strain of AlInGaAs/AlGaAs quantum well (QW) was analyzed firstly. The energy level of the electron and hole in the AlInGaAs/AlGaAs strained and GaAs/AlGaAs unstrained QW were calculated, respectively. In addition, taking the lorentzian function, the linear gain of the two QWs were calculated and discussed. Contrast the gain performance of GaAs/AlGaAs QW with that of AlyInxGa1-x-yAs/AlGaAs QW, it can be found that the strained AlyInxGa1-x-yAs/AlGaAs QW material has more promising optical gain than that of the GaAs/AlGaAs QW.

  Info
Periodical
Materials Science Forum (Volumes 475-479)
Main Theme
Edited by
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Pages
1685-1688
DOI
10.4028/www.scientific.net/MSF.475-479.1685
Citation
H. Gai, J. Deng, J. J. Li, G. D. Shen, J. Chen, "Comparison the Gain Characteristic of AlInGaAs/AlGaAs and GaAs/AlGaAs Quantum Wells", Materials Science Forum, Vols. 475-479, pp. 1685-1688, 2005
Online since
January 2005
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