Surface Morphology Evolution during LP-MOCVD Growth of ZnO on Sapphire |
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| Journal | Materials Science Forum (Volumes 475 - 479) |
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| Volume | PRICM-5 |
| Edited by | Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie |
| Pages | 1693-1696 |
| DOI | 10.4028/www.scientific.net/MSF.475-479.1693 |
| Citation | Jian Dong Ye et al., 2005, Materials Science Forum, 475-479, 1693 |
| Online since | January, 2005 |
| Authors | Jian Dong Ye, Shu Lin Gu, Su Min Zhu, S.M. Liu, Feng Qin, W. Liu, X. Zhou, R. Zhang, Y. Shi, Y.D. Zheng |
| Keywords | Atomic Force Microscope (AFM), Buffer, Morphology, Zinc Oxide ZnO |
| Abstract | The morphology evolution of ZnO films grown on sapphire (0001) by MOCVD have been studied as a function of buffer growth time and temperature by means of atomic-force microscope (AFM), x-ray diffractions (XRD) and optical microscopy. When the buffer growth temperature decreased to 450℃, the surface became smooth greatly, indicating the transition from typical 3D island growth to quasi-2D growth mode. As the buffer growth time exceeds 5min, the micron-sized pit-like features are formed. It is due to the lack of stabilization of adatoms under the “etching” action of ionized O2/Ar during high temperature buffer annealing |
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