Paper Title:
Surface Morphology Evolution during LP-MOCVD Growth of ZnO on Sapphire
  Abstract

The morphology evolution of ZnO films grown on sapphire (0001) by MOCVD have been studied as a function of buffer growth time and temperature by means of atomic-force microscope (AFM), x-ray diffractions (XRD) and optical microscopy. When the buffer growth temperature decreased to 450°C, the surface became smooth greatly, indicating the transition from typical 3D island growth to quasi-2D growth mode. As the buffer growth time exceeds 5min, the micron-sized pit-like features are formed. It is due to the lack of stabilization of adatoms under the “etching” action of ionized O2/Ar during high temperature buffer annealing

  Info
Periodical
Materials Science Forum (Volumes 475-479)
Main Theme
Edited by
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Pages
1693-1696
DOI
10.4028/www.scientific.net/MSF.475-479.1693
Citation
J. D. Ye, S. L. Gu, S. M. Zhu, S.M. Liu, F. Qin, W. Liu, X. Zhou, R. Zhang, Y. Shi, Y.D. Zheng, "Surface Morphology Evolution during LP-MOCVD Growth of ZnO on Sapphire", Materials Science Forum, Vols. 475-479, pp. 1693-1696, 2005
Online since
January 2005
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