Paper Title:
Silica and Alumina Thin Films Grown by Liquid Phase Deposition
  Abstract

This work demonstrates the condition optimization during liquid phase deposition (LPD) of SiO2/GaAs films. LPD method is further applied to form Al2O3 films on semiconductors with poison-free materials. Proceeding at room temperature with inexpensive equipment, LPD of silica and alumina films is potentially serviceable in microelectronics and related spheres.

  Info
Periodical
Materials Science Forum (Volumes 475-479)
Main Theme
Edited by
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Pages
1725-1728
DOI
10.4028/www.scientific.net/MSF.475-479.1725
Citation
J. Sun, L. Hu, Z. Wang, G. Du, "Silica and Alumina Thin Films Grown by Liquid Phase Deposition", Materials Science Forum, Vols. 475-479, pp. 1725-1728, 2005
Online since
January 2005
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Price
$32.00
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