Paper Title:
Growth of Hg1-x(Cd1-yZny)xTe on Si(111) by Isothermal Vapor Phase Epitaxy
  Abstract

The quaternary HgCdZnTe (MCZT) epilayer was successfully grown on lattice matched Cd0.96Zn0.04Te/Si(111) substrates using isothermal vapor phase epitaxy (ISOVPE) method. It was found that Si wafer is an excellent barrier against Hg and Cd diffusion. Cross-sectional images reveal a flat and well-distinguished interface between MCZT and Si, and voids formed due to interdiffusion was not observed in MCZT layer above the Si wafer. It was demonstrated that it was possible to yield an almost homogeneous MCZT epilayer without compositional gradient by selecting suitable growth time.

  Info
Periodical
Materials Science Forum (Volumes 475-479)
Main Theme
Edited by
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Pages
1729-1732
DOI
10.4028/www.scientific.net/MSF.475-479.1729
Citation
J.F. Wang, G.M. Lalev, M. Isshiki, "Growth of Hg1-x(Cd1-yZny)xTe on Si(111) by Isothermal Vapor Phase Epitaxy", Materials Science Forum, Vols. 475-479, pp. 1729-1732, 2005
Online since
January 2005
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$32.00
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