Anodizing technique was applied to prepare insulated metal substrates (IMS) for BGA packaging. “Ideal” IMS used anodic film of aluminum as the insulating layer instead of epoxy, which led to higher thermal conductivity. But the thermal shock resistance of IMS is poor because of the great difference of thermal expansion coefficient between aluminum and its anodic film. In this study, different anodizing processes of aluminum were analyzed. The parameters, which can affect the thermal shock resistance of IMS, especially the surface temperature of Al substrate, were studied. The anodic film obtained with the optimized parameters of anodizing process had excellent performance, such as the resistivity was over 1013Ω·cm, the breakdown voltage was higher than 600V, and the most important thing was that it could resist thermal shocks between room temperature and 300°C. Then BGA packaging was successfully performed based on this IMS.