Paper Title:
Anti-Weak Localization of the Two Dimensional Electron Gas in Modulation-Doped AlxGa1-xN/GaN Single Quantum Well
  Abstract

The weak-localization of the two-dimensional electron gas (2DEG) in a modulation-doped Al0.22Ga0.78N/GaN single quantum well has been investigated through the magnetoresistance measurements. The elastic scattering time τε, dephasing time τφ and spin-orbit(s-o) scattering time τso at various temperatures are obtained. The fitting parameters indicate that the inelastic scatterings to the 2DEG are mainly due to the piezoelectric field and the alloy disorder in the AlxGa1-xN barrier. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the anti-weak localization is observed clearly, which is due to the strong spin-orbit interaction. The spin-orbit effect dominates the quantum correction of the conductivity in the upper subband. The intersubband scattering becomes stronger with increasing temperature.

  Info
Periodical
Materials Science Forum (Volumes 475-479)
Main Theme
Edited by
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Pages
1787-1790
DOI
10.4028/www.scientific.net/MSF.475-479.1787
Citation
J. Lu, B. Shen, N.J. Tang, D.J. Chen, Y.D. Zheng, "Anti-Weak Localization of the Two Dimensional Electron Gas in Modulation-Doped AlxGa1-xN/GaN Single Quantum Well", Materials Science Forum, Vols. 475-479, pp. 1787-1790, 2005
Online since
January 2005
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