Paper Title:
The Structural and Photoluminescence Character of InAs Quantum Dots Grown on a Combined InAlAs and GaAs Strained Buffer Layer
  Abstract

The structural and photoluminescence (PL) properties of the InAs quantum dots (QDs) grown on a combined InAlAs and GaAs strained buffer layer have been investigated by AFM and PL measurements. The dependence of the critical thickness for the transition from 2D to 3D on the thickness of GaAs layer is demonstrated directly by RHEED. The effects of the introduced-InAlAs layer on the density and the aspect ratio of QDs have been discussed.

  Info
Periodical
Materials Science Forum (Volumes 475-479)
Main Theme
Edited by
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Pages
1791-1794
DOI
10.4028/www.scientific.net/MSF.475-479.1791
Citation
G.X. Shi, B. Xu, P. Jin, X.L. Ye, C.X. Cui, C.L. Zhang, J. Wu, Z.G. Wang, "The Structural and Photoluminescence Character of InAs Quantum Dots Grown on a Combined InAlAs and GaAs Strained Buffer Layer", Materials Science Forum, Vols. 475-479, pp. 1791-1794, 2005
Online since
January 2005
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