Paper Title:
Simulation of the MOCVD Reactor for ZnO Growth
  Abstract

In this paper we have characterized the performance of a vertical metalorganic chemical vapor deposition (MOCVD) reactor used for deposition of ZnO thin films. The equations of the mathematical model are solved numerically using a control-volume-based finite difference method. A two-dimensional model is put forward to study the dependence of the growth rate on the inlet flow rate and susceptor temperature. The mass-fraction distribution of the reactants has been studied as a function of the position above the substrate, which shows that gas phase pre-reaction in our reactor is well confined. The simulation results are useful for the practical growth of ZnO.

  Info
Periodical
Materials Science Forum (Volumes 475-479)
Main Theme
Edited by
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Pages
1833-1836
DOI
10.4028/www.scientific.net/MSF.475-479.1833
Citation
S.M. Liu, S. L. Gu, F. Qin, S. M. Zhu, J. D. Ye, W. Liu, X. Zhou, R. Zhang, Y. Shi, Y.D. Zheng, "Simulation of the MOCVD Reactor for ZnO Growth", Materials Science Forum, Vols. 475-479, pp. 1833-1836, 2005
Online since
January 2005
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$32.00
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