Paper Title:
UV-Irradiation-Induced Refractive Index Increase of Ge-Doped Silica Films
  Abstract

Ge-doped silica glass films were fabricated on Si (100) substrates for core materials of waveguide using flame hydrolysis deposition. Then the films were hydrogen loaded and irradiated to KrF excimer laser. The refractive indices and extinction coefficients of the samples before and after irradiation were determined using M-2000 variable angle incidence spectroscopic ellipsometer (VASE) and obtain the maximum increase about 0.3% at 1550 nm.

  Info
Periodical
Materials Science Forum (Volumes 475-479)
Main Theme
Edited by
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Pages
1837-1840
DOI
10.4028/www.scientific.net/MSF.475-479.1837
Citation
L. Zhang, W. Xie, Y. Hou, A. Li, J. Zheng, W. Zheng, Y. Zhang, "UV-Irradiation-Induced Refractive Index Increase of Ge-Doped Silica Films", Materials Science Forum, Vols. 475-479, pp. 1837-1840, 2005
Online since
January 2005
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