Effect of Pressure on Melting Temperature of Silicon and Germanium
|Periodical||Materials Science Forum (Volumes 475 - 479)|
|Edited by||Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie|
|Citation||C.C. Yang et al., 2005, Materials Science Forum, 475-479, 1893|
|Online since||January, 2005|
|Authors||C.C. Yang, Qing Jiang|
|Keywords||Phase Transition, Semiconductor, Surface Stress|
The pressure-dependent melting temperature of bulk Si, bulk Ge and nanocrystalline (nc) Si are predicted by the Clapeyron equation where the pressure-dependent volume difference is modeled by introducing the effect of surface stress induced pressure. The predictions are found to be consistent with the present experimental and other theoretical results.