Paper Title:
Effect of Pressure on Melting Temperature of Silicon and Germanium
| Periodical | Materials Science Forum (Volumes 475 - 479) |
|---|---|
| Main Theme | PRICM-5 |
| Edited by | Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie |
| Pages | 1893-1896 |
| DOI | 10.4028/www.scientific.net/MSF.475-479.1893 |
| Citation | C.C. Yang et al., 2005, Materials Science Forum, 475-479, 1893 |
| Online since | January, 2005 |
| Authors | C.C. Yang, Qing Jiang |
| Keywords | Phase Transition, Semiconductor, Surface Stress |
| Price | US$ 28,- |
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Abstract
The pressure-dependent melting temperature of bulk Si, bulk Ge and nanocrystalline (nc) Si are predicted by the Clapeyron equation where the pressure-dependent volume difference is modeled by introducing the effect of surface stress induced pressure. The predictions are found to be consistent with the present experimental and other theoretical results.
