Paper Title:
Effect of Pressure on Melting Temperature of Silicon and Germanium
  Abstract

The pressure-dependent melting temperature of bulk Si, bulk Ge and nanocrystalline (nc) Si are predicted by the Clapeyron equation where the pressure-dependent volume difference is modeled by introducing the effect of surface stress induced pressure. The predictions are found to be consistent with the present experimental and other theoretical results.

  Info
Periodical
Materials Science Forum (Volumes 475-479)
Main Theme
Edited by
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Pages
1893-1896
DOI
10.4028/www.scientific.net/MSF.475-479.1893
Citation
C.C. Yang, Q. Jiang, "Effect of Pressure on Melting Temperature of Silicon and Germanium", Materials Science Forum, Vols. 475-479, pp. 1893-1896, 2005
Online since
January 2005
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