Magnetoresistance and Current-Controlled Electric Transport Properties of Fe-C Film on Si Substrate |
|
| Journal | Materials Science Forum (Volumes 475 - 479) |
|---|---|
| Volume | PRICM-5 |
| Edited by | Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie |
| Pages | 2207-2210 |
| DOI | 10.4028/www.scientific.net/MSF.475-479.2207 |
| Citation | Q.Z. Xue et al., 2005, Materials Science Forum, 475-479, 2207 |
| Online since | January, 2005 |
| Authors | Q.Z. Xue, X. Zhang |
| Keywords | Electric Transport, Film, Magnetoresistivity MR |
| Abstract | Using pulsed laser deposition we prepared Fex-C1-x films on Si (100) substrates. We show that the lightly Fe-doped amorphous carbon films on Si substrate have large MR at room temperature. At T=300K and B=5T a large positive MR of 138% was found in Fe0.011-C0.989 film. Furthermore, we find that when temperature T<258K, the MR of Fe0.011-C0.989 film on Si substrate is negative and
when 258K |
| Full Paper | 
Get the full paper by clicking here
|
First page example
