Paper Title:
Magnetoresistance and Current-Controlled Electric Transport Properties of Fe-C Film on Si Substrate
  Abstract

Using pulsed laser deposition we prepared Fex-C1-x films on Si (100) substrates. We show that the lightly Fe-doped amorphous carbon films on Si substrate have large MR at room temperature. At T=300K and B=5T a large positive MR of 138% was found in Fe0.011-C0.989 film. Furthermore, we find that when temperature T<258K, the MR of Fe0.011-C0.989 film on Si substrate is negative and when 258K

  Info
Periodical
Materials Science Forum (Volumes 475-479)
Main Theme
Edited by
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Pages
2207-2210
DOI
10.4028/www.scientific.net/MSF.475-479.2207
Citation
Q.Z. Xue, X. Zhang, "Magnetoresistance and Current-Controlled Electric Transport Properties of Fe-C Film on Si Substrate", Materials Science Forum, Vols. 475-479, pp. 2207-2210, 2005
Online since
January 2005
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