Magnetoresistive Switch Effect and Its Application to Magnetic Field Sensors |
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| Journal | Materials Science Forum (Volumes 475 - 479) |
|---|---|
| Volume | PRICM-5 |
| Edited by | Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie |
| Pages | 2223-2226 |
| DOI | 10.4028/www.scientific.net/MSF.475-479.2223 |
| Citation | Zhi-gang Sun et al., 2005, Materials Science Forum, 475-479, 2223 |
| Online since | January, 2005 |
| Authors | Zhi-gang Sun, Masaki Mizuguchi, Hiroyuki Akinaga |
| Keywords | Magnetoresistive-Switch Effect, Magnetoresistivity MR, Wet Etching |
| Abstract | Magnetoresistive switch effect (MRS effect) devices containing two gold (Au) electrodes with a gap less than 2 µm were successfully fabricated on semi-insulting GaAs substrates by wet etching method. Huge MRS effect was observed. Magnetoresistance (MR) ratio reached 1,000,000% under the magnetic filed of 1.5 T when the devices were operated just above the threshold voltage. The magnetic field sensitivity at small magnetic fields was significantly improved. MR ratio of more than 1000% was achieved at 0.03 T. A relative high MR ratio of 100,000% under the magnetic filed of 1.5 T was also achieved when the devices operating before the threshold voltage. |
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