Paper Title:
The Electronic Characteristics of IrSi Thin Films
  Abstract

The Schottky barrier height (SBH) of IrSi nanometer thin films prepared by pulsed laser deposition at room temperature and annealed at 600 °C has been studied. The SBH of the sample is deduced from C-V and I-V data. These SBHs decrease with increasing measurement temperature.

  Info
Periodical
Materials Science Forum (Volumes 475-479)
Main Theme
Edited by
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Pages
3363-3366
DOI
10.4028/www.scientific.net/MSF.475-479.3363
Citation
X. Y. Ma, "The Electronic Characteristics of IrSi Thin Films", Materials Science Forum, Vols. 475-479, pp. 3363-3366, 2005
Online since
January 2005
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